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Título Materials and Processes for Next Generation Lithography.

Publicación Amsterdam, Netherlands : Elsevier, 2016.
Descripción física 1 online resource
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Colección ScienceDirect 2015/16
Contiene: Front Cover; Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography; Frontiers of Nanoscience; Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography; Copyright; Contents; Contributors; Preface; Acknowledgments; List of abbreviations; 1 -- Overview of materials and processes for lithography; 1.1 INTRODUCTION; 1.2 OVERVIEW OF LITHOGRAPHY PROCESS; 1.3 LITHOGRAPHIC EXPOSURE SOURCES AND PROCESSES; 1.3.1 Ultraviolet Lithography; 1.3.2 DUV Lithography-248nm and 193nm, Immersion, and Multiple Patterning; 1.3.3 Extreme Ultraviolet Lithography.
1.3.4 E-Beam Lithography1.3.5 Other Lithography Processes-Ion Beam, Scanning Probe, and Nanoimprint; 1.4 CHARACTERIZATION AND FIGURES OF MERIT FOR RESISTS; 1.5 RESIST MATERIALS AND CHEMISTRY; 1.5.1 Nonchemically Amplified Resists; 1.5.2 Chemically Amplified Resists; 1.5.3 Resist Physical Properties and Etch Resistance; 1.5.4 Photoacid Generator Chemistry and Physics; 1.5.5 Molecular Resists and Inorganic Resists; 1.6 CHALLENGES IN MODERN RESIST DESIGN; 1.6.1 Exposure Statistics and Shot Noise; 1.6.2 Photoacid Diffusion; 1.6.3 Resolution, Line Edge Roughness, and Sensitivity Trade-off.
1.6.4 Pattern Collapse1.7 CONCLUSIONS; REFERENCES; 2 -- Molecular excitation and relaxation of extreme ultraviolet lithography photoresists; 2.1 INTRODUCTION; 2.2 EXTREME ULTRAVIOLET MOLECULAR EXCITATION; 2.2.1 Atomic Photoemission; 2.2.2 Extreme Ultraviolet Sensitivity; 2.2.3 Gas-Phase Molecular Spectroscopy; 2.2.4 Molecular Photoemission; 2.2.5 Photoemission and Shake-Up; 2.2.6 Molecular Shape Resonances; 2.3 EXTREME ULTRAVIOLET MOLECULAR RELAXATION; 2.3.1 Electronic Relaxation in Atoms; 2.3.2 Resonant Photoabsorption; 2.3.3 Atomic Relaxation and Fragmentation in Molecules.
2.4 EXTREME ULTRAVIOLET PROCESSES IN CONDENSED FILMS2.4.1 Extreme Ultraviolet Molecular Excitation in Condensed Resist Films; 2.4.2 Molecular Relaxation in Condensed Films; 2.4.3 Reaction Cascades in Condensed Films; 2.5 OUTLOOK AND CONCLUSIONS; 2.5.1 Differences in Extreme Ultraviolet Lithography and Electron Beam Lithography; 2.5.2 Outlook and Research Needs; Acknowledgments; REFERENCES; 3 -- Theory: electron-induced chemistry; 3.1 INTRODUCTION; 3.2 MECHANISMS FOR ELECTRON-INDUCED REACTIONS; 3.2.1 Electron Attachment; 3.2.2 Electron Impact Ionization; 3.2.3 Electron Impact Excitation.
3.3 POTENTIAL ROLE IN LITHOGRAPHY3.3.1 Cross Section; 3.3.2 Spatial Resolution; 3.3.3 Rational Design of Novel Materials; 3.4 CONCLUSIONS; REFERENCES; 4 -- EUV lithography process challenges; 4.1 INTRODUCTION; 4.2 EUV-IL AS A CHARACTERIZATION AND NANOPATTERNING TOOL; 4.2.1 Extreme Ultraviolet Interference Lithography; 4.2.2 Achromatic Diffraction Grating-Based EUV-IL; 4.2.3 EUV-IL Challenges; 4.2.4 Achromatic Talbot Lithography; 4.3 RESIST MATERIAL CHALLENGES; 4.3.1 Introduction to Chemically Amplified Resists; 4.3.2 RLS Tradeoff; 4.3.3 Resist Absorption; 4.3.4 Image Blur.
Materia Microlithography.
Microlithography. (OCoLC)fst01019883
Photoresists. (OCoLC)fst01062099
Autor secundario Robinson, Alex, editor.
Lawson, Richard, editor.
OTRO SOPORTE Print version: Materials and Processes for Next Generation Lithography. Amsterdam, Netherlands : Elsevier, 2016 9780081003541 0081003544
ISBN 9780081003589 (electronic bk.)
0081003587 (electronic bk.)